MRF5S19150HR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
2020
5
15
1900
?55
40
10 ?30IRL
14 35Gps
7 ?45
ACPR
6 ?50
8 ?40IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier N-CDMA Broadband Performance
@ Pout
= 32 Watts Avg.
G
ps
, POWER GAIN (dB)
?60
?10
?20
?30
?40
INPUT RETURN LOSS (dB)
IRL,
11 20VDD
= 28 Vdc, P
out
= 32 W (Avg.), I
DQ
= 1400 mA
2?Carrier N?CDMA, 2.5 MHz Carrier Spacing
1.228 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
IM3 (dBc), ACPR (dBc)
?50
13 30ηD
12 25
9 ?35
1920 1940 1960 1980 2000
100
11
16
1
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two-Tone Power Gain versus
Output Power
G
ps
, POWER GAIN (dB)
10
15
14
13
12
IDQ
= 2100 mA
1700 mA
VDD
= 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two?Tone Measurement, 2.5 MHz Tone Spacing
1400 mA
700 mA
1050 mA
100
?55
?15
1
IDQ
= 2100 mA
1700 mA
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation versus
Output Power
VDD
= 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two?Tone Measurement, 2.5 MHz Tone Spacing
10
1400 mA
700 mA
1050 mA
?20
?25
?30
?35
?40
?45
?50
10
?60
?20
0.1
TWO?TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
INTERMODULATION DISTORTION (dBc)
IMD,
3rd Order
VDD
= 28 Vdc, P
out
= 150 W (PEP), I
DQ
= 1400 mA
Two?Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
5th Order
7th Order
?25
?30
?35
?40
?45
?50
?55
1
45
49
59
35
P3dB = 53.71 dBm (234.96 W)
Pin, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
P
out
, OUTPUT POWER (dBm)
VDD
= 28 Vdc, I
DQ
= 1400 mA
Pulsed CW, 8 μsec (on), 1 msec (off)
f = 1960 MHz
44
43
42
41
40
39
38
37
36
58
57
56
55
54
53
52
51
50
P1dB = 53.01 dBm (199.99 W)
η
D
, DRAIN
EFFICIENCY (%)
INTERMODULATION DISTORTION (dBc)
IMD, THIRD ORDER
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